SILC
基本解释
- 应力引起的泄漏电流
英汉例句
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments.
通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理. - The results show that compared with the pure oxide gate dielectrics of the same EOT,N/O stack gate dielectrics have much better performance on the aspects of tunneling leakage current,SILC characteristics,and gate dielectrics lifetime.
结果表明 ;同样EOT的Si3 N4/SiO2 stack栅介质和纯SiO2 栅介质比较 ;前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者 . - stress induced leakage current(SILC)
应力诱生漏电流(SILC) - Effect of Neutral Traps on Tunneling Current and SILC in Ultrathin Oxide Layer
超薄氧化层中的中性陷阱对隧穿电流的影响和应变诱导漏电流